Beyond Thickness: Using Picosecond Ultrasonic Technology For SiCr Process Control In BCD Devices

By Huayuan Li, Alex Hong, Johnny Mu, and Timothy Kryman Building a bipolar-CMOS-DMOS (BCD) device is one challenge; maintaining the material consistency required for reliable high-volume manufacturing (HVM) is another. In fact, achieving consistent device performance starts long before the first electrical test. From the safety systems in today’s vehicles to the power-efficient electronics in consumer devices, BCD technology supports applications where analog accuracy, digital control, and power