Research Bits: Sep. 1

High-voltage GaN Researchers from Ecole Polytechnique Fédérale de Lausanne (EPFL) debuted a new class of gallium nitride (GaN) transistor, called an intrinsic polarization superjunction (iPSJ), that can handle very high voltage with minimal energy loss. Made from layers of GaN on a low-cost silicon base, the iPSJ can withstand nearly 4 kilovolts (kV) before breaking down, which the team claims is a record for this type of technology, while maintaining low resistance. “We achieve this by exploiti