Intrinsic Polarization Superjunctions Boost GaN-On-Silicon Power Devices (EPFL)

Researchers from École Polytechnique Fédérale de Lausanne (EPFL) published a technical paper titled “Intrinsic polarization superjunctions in III-nitride heterostructures for efficient power electronics.” Abstract Excerpt: “III-nitride semiconductors combine a wide bandgap with low sheet resistance and, thus, can be used for efficient power electronics. Their lateral architecture also enables monolithic integration on cost-effective silicon. However, electric-field crowding, as well as surface a