2D P-Type Semiconductors with Oxide N-Channel Transistors For Complementary BEOL CMOS (Stanford, Hanyang)

Researchers from Stanford University and Hanyang University published a technical paper titled “Bridging the p-type gap in oxide electronics with 2D semiconductors.” “The review assesses manufacturing-aligned pathways to high-performance 2D p-channel transistors, covering transfer-free low-temperature growth, clean van der Waals contacts, gentle p-doping, and mitigation of crystallization, volatility, and interdiffusion,” and also “a pragmatic outlook for BEOL p-type 2D semiconductors is outline