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pulse Semiconductor Engineering July 20, 2026

NbAs Nanowires Show Lower Resistivity as Interconnect Dimensions Shrink (Cornell, NYCU, IBM et al.)

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Researchers at Cornell University, National Yang Ming Chiao Tung University, IBM Research, Johns Hopkins University, et al. published a technical paper titled “Surface-dominant transport in Weyl semimetal NbAs nanowires for next-generation interconnects.” Abstract Excerpt: “ We report the synthesis of Weyl semimetal niobium arsenide (NbAs) nanowires through thermomechanical nanomolding with single crystallinity and controlled diameters down to 40 nanometers.” Find the technical paper here. July

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