Hafnium oxide-based ferroelectric memory cells operate at <1V

Researchers from Fraunhofer IPMS and Globalfoundries have developed a reproducible approach for embedding hafnium oxide-based ferroelectric FRAM cells in GlobalFoundries’ 22FDX (FD-SOI) process. This platform is specifically designed for manufacturing ... The post Hafnium oxide-based ferroelectric memory cells operate at <1V appeared first on Electronics Weekly .