Toshiba test-sampling 1200V SiC MOSFET

Toshiba is test-sampling shipments of the TW007D120E, 1200V trench-gate SiC MOSFET primarily intended for power supply systems in AI datacentres. Housed in a QDPAK top-side cooled package, the surface mount ... The post Toshiba test-sampling 1200V SiC MOSFET appeared first on Electronics Weekly .