Nanoelectromechanical Switches Target More Efficient Embedded DRAM (UC Berkeley, Samsung, Intel)

Researchers at the UC Berkeley, Samsung Electronics , and Intel published “Nanoelectromechanically Gated Gain Cell eDRAM.” Abstract Excerpt : “The memory wall and the slowdown of static random access memory (SRAM) scaling have renewed interest in gain-cell embedded dynamic random access memory (DRAM). While gain cells offer high density and energy efficiency, they suffer from limited retention, parasitic coupling, and the need for boosted write voltages. This work introduces a nanoelectromechani