Simulations Pinpoint Leakage Pathway In GAAFETs (Sandia, Luxembourg)

Researchers at Sandia National Laboratories and Luxembourg Institute of Science and Technology published a technical paper titled “Revealing New Leakage Paths in GAAFETs using Predictive First-Principles Simulations.” Abstract Excerpt: “Gate-All-Around Field-Effect Transistors (GAAFETs) are emerging as successors to Fin Field-Effect Transistors (FinFETs) and are central to continued scaling at advanced semiconductor nodes. Despite their improved electrostatic control, recent measurements show th