Characterization of HBM Power Consumption (ETH Zurich, NYU)

Researchers at ETH Zürich and New York University published a technical paper titled “Understanding the Power Consumption of Modern High Bandwidth Memory: Experimental Analysis and Modeling Using Real HBM2 DRAM Chips.” Abstract Excerpt: “We perform the first comprehensive experimental characterization of power consumed by real HBM2 DRAM chips. Our extensive characterization yields 1) the empirical basis for developing new, accurate HBM power models or validating existing power models and 2) key