Toshiba launches 3300V SiC MOSFET module with high surge current capability that helps improve reliability of industrial equipment

Toshiba Electronic Devices & Storage Corp. (Toshiba) has expanded its lineup with the launch of "IX800FXF2YMS4," a dual SiC MOSFET module for industrial equipment, including railway vehicles, renewable energy power generation systems and power conversion systems. The new module features Toshiba’s third-generation silicon carbide (SiC) MOSFET chips, a drain-source voltage rating of 3300V, and a drain current (DC) rating of 800A.