Reducing Contact Resistance Pushes 2D Transistors Toward Advanced CMOS (HUST, PolyU, UCSB, NUS)

Researchers at Huazhong University of Science and Technology, Hong Kong Polytechnic University, University of California, Santa Barbara, and National University of Singapore published a technical paper titled “Low contact resistance and high current density in ballistic p-type transistors based on oxygen-doped WSe 2 monolayers.” Abstract Excerpt: “The development of high-performance p-type monolayer transistors is critical for extending two-dimensional (2D) semiconductors beyond silicon in sub 1