US Army selects Navitas to develop next-generation 10kV SiC IGBTs

Navitas was selected following a competitive evaluation involving US silicon carbide technology companies Navitas Semiconductor has been selected by the US Army to develop next-generation 10kV silicon carbide (SiC) insulated-gate bipolar transistors (IGBTs) under the ALATTIS (Accelerated, Large-Area, 10 kV SiC IGBT) programme. The programme, sponsored by the Army Research Laboratory (ARL) under the US […]